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| PD - 91343B IRFP140N HEXFET(R) Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.052 ID = 33A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 33 23 110 140 0.91 20 300 16 14 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. ---- ---- ---- Typ. ---- 0.24 ---- Max. 1.1 ---- 40 Units C/W www.irf.com 1 10/5/98 IRFP140N Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 100 --- --- 2.0 11 --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.11 --- V/C Reference to 25C, ID = 1mA --- 0.052 VGS = 10V, ID = 16A --- 4.0 V VDS = VGS, ID = 250A --- --- S VDS = 50V, ID = 16A --- 25 VDS = 100V, VGS = 0V A --- 250 VDS = 80V, VGS = 0V, TJ = 150C --- 100 VGS = 20V nA --- -100 VGS = -20V --- 94 ID = 16A --- 15 nC VDS = 80V --- 43 VGS = 10V, See Fig. 6 and 13 8.2 --- VDD = 50V 39 --- ID = 16A ns 44 --- RG = 5.1 33 --- RD = 3.0, See Fig. 10 Between lead, --- 5.0 --- 6mm (0.25in.) nH from package --- --- --- 13 --- and center of die contact --- 1400 --- VGS = 0V --- 330 --- pF VDS = 25V --- 170 --- = 1.0MHz, See Fig. 5 D G S Source-Drain Ratings and Characteristics IS ISM VSD trr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 170 1.1 33 A 110 1.3 250 1.6 V ns C Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 16A, VGS = 0V TJ = 25C, IF = 16A di/dt = 100A/s D G S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 16A, di/dt 210A/s, VDD V(BR)DSS, TJ 175C VDD = 25V, starting TJ = 25C, L = 2.0mH RG = 25, IAS = 16A. (See Figure 12) Pulse width 300s; duty cycle 2%. Uses IRF540N data and test conditions. 2 www.irf.com IRFP140N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTO M 4.5V TOP I , D rain-to-S ourc e C urren t (A ) D I , D rain-to-Source Current (A ) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 100 10 10 4.5 V 4.5V 1 0.1 1 20 s P U LS E W ID TH TC = 2 5C 10 A 1 0.1 1 2 0 s P U L S E W ID TH T C = 17 5C 10 100 A 100 V D S , D rain-to-S ourc e Voltage (V) V DS , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 R D S (on) , Drain-to-S ource O n Resistance (N orm alized) I D = 2 7A I D , D ra in -to-S ourc e C urrent (A) 2.5 100 2.0 TJ = 2 5 C TJ = 1 75 C 1.5 10 1.0 0.5 1 4 5 6 7 V DS = 5 0V 2 0 s P U L S E W ID TH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 10 V 100 120 140 160 180 A V G S , G ate-to -So urce Voltag e (V) T J , Junction T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFP140N 2400 2000 1600 1200 C oss V G S , G ate-to-S ource V oltage (V ) V GS C iss C rs s C iss C o ss = = = = 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d 20 I D = 16 A 16 V D S = 80 V V D S = 50 V V D S = 20 V C , Capacitance (pF) 12 8 800 C rss 400 4 0 1 10 100 A 0 0 20 40 FO R TE S T C IR C U IT S E E FIG U R E 1 3 60 80 100 A V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 I S D , Reverse D rain C urrent (A) O P E R A T IO N IN T H IS A R E A L IM ITE D B Y R D S (o n) I D , D rain Current (A ) 100 10 s 100 100 s 10 1m s TJ = 1 75 C T J = 2 5C 10 0.4 0.8 1.2 1.6 V G S = 0V A 1 1 T C = 25 C T J = 17 5C S ing le P u lse 10 10m s A 100 1000 2.0 V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFP140N 35 VDS VGS RD 30 D.U.T. + RG I D , Drain Current (A) - VDD 25 10V 20 Pulse Width 1 s Duty Factor 0.1 % 15 Fig 10a. Switching Time Test Circuit VDS 90% 10 5 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 P DM t1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFP140N L VDS D.U.T. RG + V - DD 10 V 700 E A S , S ingle P ulse A valanche E nergy (m J) TO P 600 B O TTO M 500 ID 6 .6A 1 1A 16 A IAS tp 0.01 400 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 300 200 100 0 V D D = 25 V 25 50 75 100 125 150 A 175 S tarting T J , J unc tion T em perature (C ) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFP140N Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFP140N Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) 1 5.90 (.62 6) 1 5.30 (.60 2) -B3.65 (.1 43) 3.55 (.1 40) 0.25 (.0 10) M -A5 .50 (.217) 20 .30 (.800) 19 .70 (.775) 1 2 3 -C14.8 0 (.5 83) 14.2 0 (.5 59) 4.3 0 (.1 70) 3.7 0 (.1 45) L EA D A S SIG N M E N TS 1 2 3 4 G A TE D R AIN S O UR C E D R AIN -DDBM 5 .30 (.209 ) 4 .70 (.185 ) 2.5 0 (.08 9) 1.5 0 (.05 9) 4 2X 5.50 (.21 7) 4.50 (.17 7) N O TES : 1 DIM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 1 98 2. 2 CO N TR O LL IN G DIM EN S IO N : IN CH . 3 CO N F O RM S TO JED E C O U TLINE TO -2 47 -A C . 2.40 (.09 4) 2.00 (.07 9) 2X 5.45 (.2 15) 2X 1.4 0 (.0 56) 3 X 1.0 0 (.0 39) 0.2 5 (.0 10) M 3 .40 (.133 ) 3 .00 (.118 ) C AS 0.80 (.03 1) 3X 0.40 (.01 6) 2.60 (.1 02) 2.20 (.0 87) Part Marking Information TO-247AC E X A M P L E : TH IS IS A N IR F P E 3 0 W IT H A S S E M B L Y LO T CO DE 3A1Q A IN TE R N A TIO N A L R E C T IF IE R LO G O ASSEM BLY LOT CODE PAR T NU MBER IR F P E 3 0 3A 1Q 9302 D ATE C O DE (Y Y W W ) YY = YEAR W W W EEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 8/98 8 www.irf.com |
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